_{2}Se

_{3}/BSCCO [1] and graphene/h-BN [2,3]. Iwill show how the proximity effect (in Bi

_{2}Se

_{3}/BSCCO) and moire superlatticepotential (in graphene/h-BN) tune the electronic properties and further lead tothe realization of many novel quantum phenomena. The variety of 2D materialsgenerates great possibilities in 2D heterostructures which are waiting for moreresearch investigations. [mehr]

See 'more' for link for lecture notes and supportin material.
[mehr]

_{4,5}-edge (~30 eV). In the experiment, a 5 fs VIS-NIR pump pulse excites carriers across the direct band gap and the dynamics are probed with a time-delayed broadband extreme ultraviolet pulse generated by high harmonic generation in xenon spanning ~20-45 eV. The observed transient absorption signal contains the energetic distribution of both carriers, electrons and holes, due to state blocking as well as spectroscopic features induced by bandshifts (e.g. due to band gap renormalization) and broadening (e.g. due to many body effects). By iterative procedures the measured signal can be successfully decoupled into these contributions resolving the carrier and band dynamics with excellent time and energy resolution. Hot carrier relaxation on a 100-fs time scale and carrier recombination on a 1-ps time scale are observed in nanocrystalline Germanium. Going from bulk semiconductor to two-dimensional layers, long-lived core-exciton states are observed at the MoN

_{2,3}edge between 32 and 35 eV in MoS

_{2}. Comparing the XUV absorption spectra of bulk and monolayer MoS

_{2}, a ~4 eV red-shift suggests a tightly bound core-exciton. The lifetime of the core-exciton states can be directly measured in the time domain. Furthermore, transient Stark shifts, coherences, and coherent population transfer between different core-exciton states are observed. [mehr]

Lecture notes see 'more'.
[mehr]

Lecture notes see 'more'.
[mehr]

Lecture notes see 'more'
[mehr]

Lecture IV Abstract will follow.
[mehr]

Lecture V Abstract will follow.
[mehr]

Lecture VI Abstract will follow.
[mehr]

_{c}~400mK). When a mm-sized structure is firmly coupled to a mm-sized substrate of different thermal expansion, the microstructure is under significant strain at low temperatures. By precisely controlling its shape, the emergent strain field can be controlled. The key difference to other approaches, such as uniaxial strain, is that complex, yet well-controlled, spatially varying strain fields can be achieved. In collaboration with Katja Nowack (Cornell), we have experimentally mapped out the resulting superconducting landscape in the devices using scanning-SQUID microscopy, and show that this spatial modulation can be well captured by finite element simulations. [1] Second, I will present our ongoing efforts to experimentally identify pseudo-magnetic fields in 3D Dirac semi-metals [2,3]. Owing to their Dirac dispersion, deformation of the crystal structure does not open a gap at the nodes, but shifts the location of the nodes in k-space and hence playing the role of a “pseudo-magnetic field”, B

_{5}. I will show how microstructuring gives us unprecedented control of such a process, and discuss how future. [mehr]